R&D Dram Device Engineer

R&D Dram Device Engineer
Azienda:

Micron Technology



Funzione Lavorativa:

Ingegneria

Dettagli della offerta

Our vision is to transform how the world uses information to enrich life for all. Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever.
Job Title: R&D DRAM Device EngineerAs a Device Engineer working in the R&D DRAM Device and Cell Technology Group at Micron, you will be working on future memory scaling, in an industry-leading R&D team.
You will be responsible for the testing and characterization of future DRAM and emerging memories, analyzing electrical failures and probe data, defining electrical specifications, working on the improvement of yield and quality, and overall cell performance. You will interact significantly with material, process, design, modeling, characterization, and product groups across different geographies (Italy, US, Japan, and more).
Responsibilities: Develop understanding of process and device requirements for current and future DRAM memory cell and access device technologies and help establish electrical specifications.Evaluate in-line, probe, parametric, and back-end data.Understand and develop physical and electrical models for fundamental yield-limiting mechanisms in DRAM technologies through statistical data analysis of experiments conducted in semiconductor fab.Characterize the memory array and model cell device and access device properties to identify improvement opportunities for yield, quality, and cost metrics.Contribute to the cell material and process flow definition, by designing and executing experiments and stress tests to evaluate DRAM memory cell and access device capabilities and properties and the effects on reliability, functionality, and performance.Evaluate memory management and ECC to improve product quality and reliability metrics for current and future generations of DRAM memories.Collaborate effectively with cross-functional teams, including product, modeling, design & process integration engineers, to address cell deficiencies and execute improvement roadmaps.Provide project status updates to the team and management at a regular cadence.Qualifications: You have a deep understanding of Semiconductor Device Physics including CMOS, BJT, diodes, etc.You are proficient with data analysis, DOE, and statistical techniques (JMP, Python).Good written and verbal communication skills.Excellent problem-solving, analytical, organizational, and team-building skills.Education: MS or PhD in Electronic Engineering, Physics, or other related technical field is required.About Micron Technology, Inc. We are an industry leader in innovative memory and storage solutions transforming how the world uses information to enrich life for all. With a relentless focus on our customers, technology leadership, and manufacturing and operational excellence, Micron delivers a rich portfolio of high-performance DRAM, NAND, and NOR memory and storage products through our Micron and Crucial brands. Every day, the innovations that our people create fuel the data economy, enabling advances in artificial intelligence and 5G applications that unleash opportunities — from the data center to the intelligent edge and across the client and mobile user experience.
Equal Opportunity Employer: All qualified applicants will receive consideration for employment without regard to race, color, religion, sex, sexual orientation, gender identity, national origin, veteran or disability status.
Application Process: To learn more, please visit micron.com/careers. If you need assistance with the application process and/or for reasonable accommodations, please contact ******.

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Funzione Lavorativa:

Requisiti

R&D Dram Device Engineer
Azienda:

Micron Technology



Funzione Lavorativa:

Ingegneria

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